A - 4 – INFICON IQM-233 Thin Film Deposition Controller PCI-Express Card Codeposition Software Operating Manual User Manual
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IQS-233 Operating Manual
Gd
7.890
0.670
gadolinium
Gd
2
O
3
7.410
*1.000
gadolinium oxide
Ge
5.350
0.516
germanium
Ge
3
N
2
5.200
*1.000
germanium nitride
GeO
2
6.240
*1.000
germanium oxide
GeTe
6.200
*1.000
germanium telluride
Hf
13.090
0.360
hafnium
HfB
2
10.500
*1.000
hafnium boride
HfC
12.200
*1.000
hafnium carbide
HfN
13.800
*1.000
hafnium nitride
HfO
2
9.680
*1.000
hafnium oxide
HfSi
2
7.200
*1.000
hafnium silicide
Hg
13.460
0.740
mercury
Ho
8.800
0.580
holminum
Ho
2
O
3
8.410
*1.000
holminum oxide
In
7.300
0.841
indium
In
2
O
3
7.180
*1.000
indium sesquioxide
In
2
Se
3
5.700
*1.000
indium selenide
In
2
Te
3
5.800
*1.000
indium telluride
InAs
5.700
*1.000
indium arsenide
InP
4.800
*1.000
indium phosphide
InSb
5.760
0.769
indium antimonide
Ir
22.400
0.129
iridium
K
0.860
10.189
potassium
KBr
2.750
1.893
potassium bromide
KCI
1.980
2.050
potassium chloride
KF
2.480
*1.000
potassium fluoride
KI
3.128
2.077
potassium iodide
La
6.170
0.920
lanthanum
La
2
O
3
6.510
*1.000
lanthanum oxide
LaB
6
2.610
*1.000
lanthanum boride
LaF
3
5.940
*1.000
lanthanum fluoride
Li
0.530
5.900
lithium
Table A-1 Material table (continued)
Formula
Density
Z-Ratio
Material Name