A - 4 – INFICON IC6 Thin Film Deposition Controller User Manual
Page 328
A - 4
PN
07
4-
50
5-
P1
F
IC6 Operating Manual
90
HfC
12.200
*1.000
hafnium carbide
91
HfN
13.800
*1.000
hafnium nitride
92
HfO
2
9.680
*1.000
hafnium oxide
93
HfSi
2
7.200
*1.000
hafnium silicide
94
Hg
13.460
0.740
mercury
95
Ho
8.800
0.580
holmium
96
Ho
2
O
3
8.410
*1.000
holmium oxide
97
In
7.300
0.841
indium
98
In
2
O
3
7.180
*1.000
indium sesquioxide,
99
In
2
Se
3
5.700
*1.000
indium selenide
100
In
2
Te
3
5.800
*1.000
indium telluride
101
InAs
5.700
*1.000
indium arsenide
102
InP
4.800
*1.000
indium phosphide
103
InSb
5.760
0.769
indium antimonide
104
Ir
22.400
0.129
iridium
105
K
0.860
10.189
potassium
106
KBr
2.750
1.893
potassium bromide
107
KCI
1.980
2.050
potassium chloride
108
KF
2.480
*1.000
potassium fluoride
109
KI
3.128
2.077
potassium iodide
110
La
6.170
0.920
lanthanum
111
La
2
O
3
6.510
*1.000
lanthanum oxide
112
LaB
6
2.610
*1.000
lanthanum boride
113
LaF
3
5.940
*1.000
lanthanum fluoride
114
Li
0.530
5.900
lithium
115
LiBr
3.470
1.230
lithium bromide
116
LiF
2.638
0.778
lithium fluoride
117
LiNbO
3
4.700
0.463
lithium niobate
118
Lu
9.840
*1.000
lutetium
119
Mg
1.740
1.610
magnesium
120
MgAl
2
O
4
3.600
*1.000
magnesium aluminate
121
MgAl
2
O
6
8.000
*1.000
spinel
122
MgF
2
3.180
0.637
magnesium fluoride
123
MgO
3.580
0.411
magnesium oxide
124
Mn
7.200
0.377
manganese
125
MnO
5.390
0.467
manganese oxide
Table A-1 Material table (continued)
Code
Formula
Density
Z-Ratio
Material Name