Motorola MC68VZ328 - Manual (Page 111)

DRAM Controller 7-1
Chapter 7
DRAM Controller
This chapter describes the DRAM controller for the MC68VZ328. The operation of the DRAM controller
is closely linked to the chip-select logic. Please refer to Chapter 6, “Chip-Select Logic,” for more details.
7.1 Introduction to the DRAM Controller
The DRAM controller provides a glueless interface for either 8-bit or 16-bit DRAM. It supports EDO
RAM, Fast Page Mode, and synchronous DRAM. The DRAM controller provides Row Address Strobe
(RAS) and Column Address Strobe (CAS) signals for up to a maximum of two banks of DRAM. In
addition to controlling DRAM, the DRAM controller provides support for LCD controller burst accesses.
The DRAM controller has the following features:
• 68000 CPU zero wait-state operation support
• CAS-before-RAS refresh cycles and self-refresh mode DRAM support
• 8- and 16-bit port DRAM support
• Fast Page Mode and EDO RAM modes or synchronous burst for LCD DMA access cycles
• Programmable refresh rate
• Support for a maximum of two banks of DRAM
• Programmable row and column address size with symmetrical or asymmetrical addressing
• Support for up to 16 Mbyte × 16 or 32 Mbyte × 8 DRAM or SDRAM
A block diagram of the DRAM controller appears in Figure 7-1 on page 7-2.