Figure 19-4, Chip-select flash write cycle timing diagram -7, Table 19-6 – Motorola MC68VZ328 User Manual

Page 323: Chip-select flash write cycle timing parameters -7

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AC Electrical Characteristics

Electrical Characteristics

19-7

Figure 19-4. Chip-Select Flash Write Cycle Timing Diagram

Table 19-6. Chip-Select Flash Write Cycle Timing Parameters

Number

Characteristic

(3.0 ± 0.3) V

Unit

Minimum

Maximum

1

Address valid to CSx asserted
(bit ECDS = 0, bit ECDS = 1)

20, 20 - T/2

ns

2

CSx

asserted to UWE/LWE asserted

20

40

ns

3

CSx

asserted to data-out valid

30

ns

4

External DTACK

input setup from CSx

asserted

20 + nT

ns

5

CSx

pulse width

(bit ECDS = 0, bit ECDS = 1)

60 + nT,

(60 + T/2) + nT

ns

6

UWE/LWE negated before CSx

is negated

10

20

ns

7

External DTACK

input hold after CSx

is negated

0

ns

8

Data-out hold after CSx is negated

8

ns

9

CSx

negated to data-out in Hi-Z

18

ns

Note:
n is the number of wait states in the current memory access cycle.
T is the system clock period.
The external DTACK input requirement is eliminated when CSx is programmed to use the internal DTACK.
CSx stands for CSA0, CSA1, CSB0, CSB1, CSC0, CSC1, CSD0, or CSD1.
A value in parentheses is used when early detection is turned on.

A[31:0]

CSx

UWE/LWE

OE

D[15:0]

DTACK

5

1

2

6

3

9

8

4

7

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