4 chip-select flash write cycle timing, Chip-select flash write cycle timing -6, Table 19-5 – Motorola MC68VZ328 User Manual

Page 322: Chip-select write cycle timing parameters -6

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19-6

MC68VZ328 User’s Manual

AC Electrical Characteristics

19.3.4

Chip-Select Flash Write Cycle Timing

Figure 19-4 on page 19-7 shows the flash write cycle timing used by chip-select. The signal values and
units of measure for this figure are found in Table 19-6 on page 19-7. For detailed information about the
individual signals, see Chapter 6, “Chip-Select Logic.”

Table 19-5. Chip-Select Write Cycle Timing Parameters

Number

Characteristic

(3.0 ± 0.3) V

Unit

Minimum

Maximum

1

Address valid to CSx asserted
(bit ECDS = 0, bit ECDS = 1)

20, 20 - T/2

ns

2

CSx

asserted to UWE/LWE asserted

0

4

ns

3

CSx

asserted to data-out valid

30

ns

4

External DTACK

input setup from CSx

asserted

20 + nT

ns

5

CSx

pulse width

(bit ECDS = 0, bit ECDS = 1)

60 + nT,

(60 + T/2) + nT

ns

6

UWE/LWE negated before CSx

is negated

10

20

ns

7

External DTACK

input hold after CSx is negated

0

ns

8

Data-out hold after CSx

is negated

8

ns

9

CSx

negated to data-out in Hi-Z

18

ns

10

CSx

asserted to WE asserted (16-bit SRAM)

0

4

ns

11

WE negated before CSx

is negated (16-bit SRAM)

10

20

ns

Note:
n is the number of wait-states in the current memory access cycle.
T is the system clock period.
The external DTACK input requirement is eliminated when CSx is programmed to use the internal DTACK.
CSx stands for CSA0, CSA1, CSB0, CSB1, CSC0, CSC1, CSD0, or CSD1.
A value in parentheses is used when early detection is turned on.

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