Texas Instruments MSP430x1xx - Manual (Page 423)

Flash Memory Data Structure and Operation
C-11
Flash Memory
Figure C–8.Basic Flash Memory Module Timing During Write (Single Byte or Word) Cycle
ОО
ОО
О
О
BUSY
Generate
Programming Voltage
Programming Operation Active
Entire Programming Cycle Timing
Programming Voltage
Remove
Time of Increased Current Consumption From Supply, VCC
t
(prog)
= 33/fx
Figure C–9.Basic Flash Memory Module Timing During a Segment-Write Cycle
t
(prog3)
= 5/fx
BUSY
WAIT
Generate
Programming Voltage
Programming Operation Active
Entire Programming Cycle Timing
Programming Voltage
t
(prog_all)
∼
=< 25ms
Remove
Time of Increased Current Consumption From Supply, VCC
t
(prog1)
= 30/fx t
(prog2)
= 20/fx t
(prog2)
= 20/fx
Write to Flash e.g., MOV #123h, &Flash
SEGWRT bit
The segment write can be used on sequential addresses of the memory
module. One segment is 64 bytes long, starting at 0xx00h, 0xx40h, 0xx80h,
or 0xxC0h, and ending at 0xx3Fh, 0xx7Fh, 0xxBFh, or 0xxFFh. Examples of
sequential segment addresses are:
0F000h to 0F03Fh, 0F040h to 0F07Fh,0F080h to 0F0BFh,
0F0C0h to 0F0FFh, 0F100 to 0F13Fh,
The segment-write (program) operation at the 64-byte boundaries needs spe-
cial software support (test of address 0xx3Fh, 0xx7Fh, 0xxBFh, or 0xxFFh was
successful):
- Wait until the WAIT bit is set, indicating that the write of the last byte or word
was completed.
- Reset control bit SEGWRT.
- The BUSY bit remains set until the programming voltage is removed from
the flash memory module and overstress is avoided.
- Wait the recovery time t
(rcv)
before another segment write is started.