Illustrations – Motorola MPC8260 User Manual

Page 37

Advertising
background image

MOTOROLA

Illustrations

xxxvii

ILLUSTRATIONS

Figure
Number

Title

Page

Number

10-82

Refresh Cycle (CBR) to EDO DRAM................................................................... 10-98

10-83

Exception Cycle For EDO DRAM ........................................................................ 10-99

10-84

Pipelined Bus Operation and Memory Access in 60x-Compatible Mode........... 10-103

10-85

External Master Access (GPCM) ........................................................................ 10-104

10-86

External Master Configuration with SDRAM Device......................................... 10-105

11-1

L2 Cache in Copy-Back Mode ................................................................................ 11-2

11-2

External L2 Cache in Write-Through Mode............................................................ 11-4

11-3

External L2 Cache in ECC/Parity Mode ................................................................. 11-6

11-4

Read Access with L2 Cache .................................................................................... 11-9

12-1

Test Logic Block Diagram....................................................................................... 12-2

12-2

TAP Controller State Machine ................................................................................ 12-3

12-3

Output Pin Cell (O.Pin) ........................................................................................... 12-4

12-4

Observe-Only Input Pin Cell (I.Obs)....................................................................... 12-4

12-5

Output Control Cell (IO.CTL) ................................................................................. 12-5

12-6

General Arrangement of Bidirectional Pin Cells..................................................... 12-5

13-1

MPC8260 CPM Block Diagram .............................................................................. 13-3

13-2

Communications Processor (CP) Block Diagram ................................................... 13-5

13-3

RISC Controller Configuration Register (RCCR) ................................................... 13-8

13-4

RISC Time-Stamp Control Register (RTSCR)........................................................ 13-9

13-5

RISC Time-Stamp Register (RTSR) ..................................................................... 13-10

13-6

CP Command Register (CPCR)............................................................................. 13-11

13-7

Dual-Port RAM Block Diagram ............................................................................ 13-15

13-8

Dual-Port RAM Memory Map .............................................................................. 13-16

13-9

RISC Timer Table RAM Usage ............................................................................ 13-19

13-10

RISC Timer Command Register (TM_CMD) ....................................................... 13-20

13-11

TM_CMD Field Descriptions................................................................................ 13-21

13-12

RISC Timer Event Register (RTER)/Mask Register (RTMR).............................. 13-21

14-1

SI Block Diagram .................................................................................................... 14-2

14-2

Various Configurations of a Single TDM Channel ................................................. 14-5

14-3

Dual TDM Channel Example .................................................................................. 14-6

14-4

Enabling Connections to the TSA ........................................................................... 14-8

14-5

One TDM Channel with Static Frames and Independent Rx and Tx Routes .......... 14-9

14-6

One TDM Channel with Shadow RAM for Dynamic Route Change ................... 14-10

14-7

SIx RAM Entry Fields ........................................................................................... 14-10

14-8

Using the SWTR Feature....................................................................................... 14-12

14-9

Example: SIx RAM Dynamic Changes, TDMa and b, Same SIx RAM Size ....... 14-16

14-10

SI Global Mode Registers (SIxGMR) ................................................................... 14-17

14-11

SI Mode Registers (SIxMR) .................................................................................. 14-18

14-12

One-Clock Delay from Sync to Data (xFSD = 01)................................................ 14-20

14-13

No Delay from Sync to Data (xFSD = 00) ............................................................ 14-20

14-14

Falling Edge (FE) Effect When CE = 1 and xFSD = 01 ....................................... 14-21

14-15

Falling Edge (FE) Effect When CE = 0 and xFSD = 01 ....................................... 14-21

14-16

Falling Edge (FE) Effect When CE = 1 and xFSD = 00 ....................................... 14-22

Advertising