INFICON IC/5 Thin Film Deposition Controller - Manual (Page 302)

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IC/5 Operating Manual
83 Gd
2
O
3
7.410 *1.000 Gadolinium Oxide
84 Ge 5.350 0.516 Germanium
85 Ge
3
N
2
5.200 *1.000 Germanium Nitride
86 GeO
2
6.240 *1.000 Germanium Oxide
87 GeTe 6.200 *1.000 Germanium Telluride
88 Hf 13.090 0.360 Hafnium
89 HfB
2
10.500 *1.000 Hafnium Boride,
90 HfC 12.200 *1.000 Hafnium Carbide
91 HfN 13.800 *1.000 Hafnium Nitride
92 HfO
2
9.680 *1.000 Hafnium Oxide
93 HfSi
2
7.200 *1.000 Hafnium Silicide
94 Hg 13.460 0.740 Mercury
95 Ho 8.800 0.580 Holminum
96 Ho
2
O
3
8.410 *1.000 Holminum Oxide
97 In 7.300 0.841 Indium
98 In
2
O
3
7.180 *1.000 Indiurn Sesquioxide,
99 In
2
Se
3
5.700 *1.000 Indium Selenide
100 In
2
Te
3
5.800 *1.000 Indium Telluride
101 InAs 5.700 *1.000 Indium Arsenide
102 InP 4.800 *1.000 Indium Phosphide
103 InSb 5.760 0.769 Indium Antimonide
104 Ir 22.400 0.129 Iridium
105 K 0.860 10.189 Potassium
106 KBr 2.750 1.893 Potassium Bromide
107 KCI 1.980 2.050 Potassium Chloride
108 KF 2.480 *1.000 Potassium Fluoride
109 KI 3.128 2.077 Potassium Iodide
110 La 6.170 0.920 Lanthanum
111 La
2
O
3
6.510 *1.000 Lanthanum Oxide
112 LaB
6
2.610 *1.000 Lanthanurn Boride
113 LaF
3
5.940 *1.000 Lanthanum Fluoride
114 Li 0.530 5.900 Lithium
115 LiBr 3.470 1.230 Lithium Bromide
Table A-1 Material Table (continued)
Code Formula Density Z-Ratio Material Name