4 functional description, 1 external signals (sdram side), Section 8.4, functional description – Freescale Semiconductor MPC5200B User Manual

Page 248: Section 8.4.1, external signals (sdram side)

Advertising
background image

Functional Description

MPC5200B Users Guide, Rev. 1

Freescale Semiconductor

8-15

8.4

Functional Description

8.4.1

External Signals (SDRAM Side)

Table 8-3. SDRAM External Signals

Signal Name

Description

Outputs

MEM_CLK

Memory Clock (frequency is the same as the internal XL bus clock). Maximum allowed
value is 132 MHz.

MEM_CLK

Inverted Memory Clock, used for DDR-SDRAM devices.

Internally generated “DQS” for SDR-SDRAM devices.

MEM_CLK_EN

Memory Clock Enable (CKE). When low, the SDRAM is disabled. Used to switch memory
into and out of self-refresh/power-down modes.

MEM_CS[0],

MEM_CS[1]

Memory Command Select. Each space has a command select to enable commands

MEM_RAS

Memory Row Address Select

MEM_CAS

Memory Column Address Select

MEM_WE

Memory Write Enable

MEM_MA[12:0]

Memory Multiplexed Address. These are used as row address, column address, or
Mode(Extended Mode) register data, depending on the command issued.

Row address during Active command.

Column address during Read and Write commands. MEM_MA10 is used as a control
signal instead of an address line, to control Auto Precharge operation. The Auto Precharge
control bit is not counted as a column address bit. The Memory Controller does not use
Auto Precharge.

Mode register data during Load Mode Register and Load Extended Mode Register (DDR
only) commands.

MEM_MBA[1:0]

Memory Bank Address, or Mode register select, depending on the command issued.

Bank address during Precharge Selected, Active, Read, and Write commands. The
Memory Controller does not use the Precharge Selected command.

Mode register select during Load Mode Register and Load Extended Mode Register (DDR
only) commands. Although SDR memory only has a single internal Mode register, the Bank
Address bits must still be valid.

MEM_DQM[3:0]

Memory Data Mask. Addressing = 0:3

0 Data byte read/write is enabled

1 Data byte read/write is inhibited

SDR memories 3-state inhibited data during reads; DDR memories ignore Data Mask
during reads. The memory controller never masks read data.

Bidirectional Signals

MEM_MDQ[31:0]

Memory Data. Addressing = 0:3.

MEM_MDQS[3:0]

Memory Data Strobe, DDR only. Addressing = 0:3.

Note: Signals MEM_RAS, MEM_CAS, MEM_WE, and MEM_CLK_EN encode the SDRAM commands to control the
different SDRAM operations.

Note: For 16-bit mode external pull-down devices are required on MEM_MDQS[1:0].

Advertising