Renesas SH7781 - Manual (Page 1623)

32. Electrical Characteristics
Rev.1.00 Jan. 10, 2008 Page 1593 of 1658
REJ09B0261-0100
Item Symbol Min. Max. Unit Figure Notes
Write command to first
MDQS delay time
(Rising edge) t
WDQSS
WL
−0.18
WL
+0.18 t
MCK
MDQS falling edge
setup time to MCK
rising edge (Write) t
WDSS
0.27 — t
MCK
MDQS falling edge hold
time to MCK rising edge
(Write) t
WDSH
0.27 — t
MCK
MDQS high-level pulse
width (Write) t
WDQSH
0.35 0.9 t
MCK
MDQS low-level pulse
width (Write) t
WDQSL
0.35 0.9 t
MCK
MDQS preamble (Write) t
WPRE
0.35 — t
MCK
MDQS postamble
(write) t
WPST
0.4 — t
MCK
430 DDR2-600 MDQ/MDM setup time
to MDQS (Write) t
WDS
630 —
ps
DDR2-400
430 DDR2-600 MDQ/MDM hold time to
MDQS (Write) t
WDH
630 —
ps
DDR2-400
MDQ/MDM signal width
(Write) t
WDIPW
0.35 — t
MCK
MDQ high-impedance
time from MDQS (Write) t
HZ
t
WDH
t
MCK
ns
Note: t
MCK
: one MCK cycle time
t
CK
t
CH
t
CL
MCK0, MCK1
MCK0, MCK1
Figure 32.26 MCK Output Clock